Silicon

silicon laser micromachining

monocrystalline silicon is the basis for integrated circuits, central processing units, and high-end MEMS sensors. As a brittle material, silicon is prone to spalling and microcracking under traditional processing stresses. Unlike deep reactive ion etching (DRIE), which requires an expensive mask, our femtosecond laser technology requires no mask and is highly flexible.

Main advantages

through "cold ablation", we eliminate thermal stress and achieve sub-micron accuracy without damaging the material. This makes our solutions ideal for silicon-based prototyping, feasibility studies and small-volume customization.

✅Sub-micron accuracy: When the surface roughness Ra≤ 0.2 microns, the accuracy is ± 1 micron.
✅No thermal damage: non-contact process to ensure that the edge without peeling, no melting, no micro-cracks.
✅Simplified process: no mask operation, almost no post-processing.
✅Capacity: Supports wafers with a thickness of 2mm and a thickness of 350 x 350mm ≤.